Nonvolatile memory device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9006089-B2
Application number	US-201414524545-A
Country	US
Kind code	B2
Filing date	Oct 27, 2014
Priority date	Dec 29, 2011
Publication date	Apr 14, 2015
Grant date	Apr 14, 2015

Abstract

The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from a substrate, a plurality of hole-supply layers and a plurality of gate electrodes, which are alternately stacked along the channel layers, and a memory film interposed between the channel layers and the gate electrodes and between the hole-supply layers and the gate electrodes. According to this technology, the hole-supply layers are formed between the memory cells such that sufficient holes are supplied to the memory cells during the erase operation of the memory cells, whereby the erase operation of the memory cells is smoothly performed without using the GIDL current, and the properties of the device are protected from being deteriorated due to program/erase cycling.

First claim

What is claimed is:

1. A method for fabricating a non-volatile memory device, comprising:
forming an interlayer insulating film over a substrate;
alternately stacking a plurality of hole-supply layers and a plurality of sacrificial layers over the interlayer insulating film;
selectively etching the hole-supply layers and the sacrificial layers to form channel holes which expose the substrate;
forming a channel layer in each of the channel holes;
forming a slit hole through…

Assignees

• Sk Hynix Inc

Inventors

• Jung Sung-Wook

Classifications

• H10D30/693

  Electricity · mapped topic

• H10D84/016

  Electricity · mapped topic

• H01L27/11582 Primary

  Electricity · mapped topic

• H10B43/27 Primary

  Electricity · mapped topic