High aspect ratio dense pattern-programmable nanostructures utilizing metal assisted chemical etching
US-2015376798-A1 · Dec 31, 2015 · US
US9001968B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9001968-B2 |
| Application number | US-201213662038-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2012 |
| Priority date | Oct 27, 2011 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the Kα emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from normal incidence. The bent quartz crystal can therefore accurately image argon Kα x-rays at near-normal incidence (Bragg angle of approximately 81 degrees). The method is useful for in-situ calibration of instruments employing the crystal as a grating by first operating the crystal as a high throughput focusing monochromator on the Rowland circle at angles far from normal incidence (Bragg angle approximately 68 degrees) to make a reflection curve with the He-like x-rays such as the He-α emission line observed from a laser-excited plasma.
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What is claimed is: 1. A method for characterizing spectrometric properties of bent crystal comprising: a) positioning a bent crystal that is suitable to image selected emission spectra and reflect characteristic x-ray emission spectra of a target substance disposed on a Rowland circle in the path of x-ray emissions from the target substance wherein a reflective surface of the bent crystal is disposed at approximately the Bragg angle to the path; b) exciting the target substance…
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