Method for characterization of a spherically bent crystal for Kα X-ray imaging of laser plasmas using a focusing monochromator geometry

US9001968B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9001968-B2
Application numberUS-201213662038-A
CountryUS
Kind codeB2
Filing dateOct 26, 2012
Priority dateOct 27, 2011
Publication dateApr 7, 2015
Grant dateApr 7, 2015

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Abstract

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A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the Kα emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from normal incidence. The bent quartz crystal can therefore accurately image argon Kα x-rays at near-normal incidence (Bragg angle of approximately 81 degrees). The method is useful for in-situ calibration of instruments employing the crystal as a grating by first operating the crystal as a high throughput focusing monochromator on the Rowland circle at angles far from normal incidence (Bragg angle approximately 68 degrees) to make a reflection curve with the He-like x-rays such as the He-α emission line observed from a laser-excited plasma.

First claim

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What is claimed is: 1. A method for characterizing spectrometric properties of bent crystal comprising: a) positioning a bent crystal that is suitable to image selected emission spectra and reflect characteristic x-ray emission spectra of a target substance disposed on a Rowland circle in the path of x-ray emissions from the target substance wherein a reflective surface of the bent crystal is disposed at approximately the Bragg angle to the path; b) exciting the target substance…

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What does patent US9001968B2 cover?
A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the Kα emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from no…
Who is the assignee on this patent?
L Livermore Nat Security Llc, Univ California, GSI
What technology area does this patent fall under?
Primary CPC classification G21K1/06. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).