Nanoparticle synthesis

Patent metadata

Field	Value
Publication number	US-9000416-B2
Application number	US-201313744011-A
Country	US
Kind code	B2
Filing date	Jan 17, 2013
Priority date	Jul 29, 2009
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.

First claim

What is claimed is:

1. A composition comprising:
a noble metal nanoparticle positioned on a predetermined region of a semiconductor substrate, the noble metal nanoparticle being separated from another nanoparticle on the substrate by a barrier, wherein the barrier is a portion of the semiconductor substrate that is raised relative to the region of the semiconductor substrate upon which the nanoparticle is positioned.

2. The composition of claim 1 , wherein the barrier includes a polymeric material.

3. The composition of claim 1 , wherein the barrier is raised relative to the region of the substrate upon which the nanoparticle is positioned.

4. The composition of claim 1 , wherein the substrate is GaAs.

5. The composition of claim 2 , wherein the polymeric material is PMMA.

6. The composition of claim 1 , wherein the nanoparticle is a nanocrystal.

7. The composition of claim 1 , wherein the noble metal is Au.

8. The composition of claim 1 , wherein the nanoparticle has a diameter of 25 nm or smaller, or 10 nm or smaller.

9. A nanomaterial comprising:
a noble metal nanocrystal; and
an amorphous layer comprising an oxide at least partially surrounding the nanoparticle.

10. The nanomaterial of claim 9 , wherein the noble metal is Au.

11. The nanomaterial of claim 9 , wherein the average diameter of the nanocrystal is 25 nm or smaller, or 10 nm or smaller.

12. The nanomaterial of claim 9 , wherein the oxide is derived from the semiconductor material.

Assignees

• Massachusetts Inst Technology

Inventors

• Gradecak Silvija
• Tseng Chun-Hao
• Lim Sung Keun

Classifications

• B22F1/054

  Nanosized particles · CPC title

• H10D48/383

  Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects · CPC title

• B22F9/24 Primary

  starting from liquid metal compounds, e.g. solutions · CPC title

• C30B29/605

  Products containing multiple oriented crystallites, e.g. columnar crystallites · CPC title

• H01L29/66977 Primary

  Electricity · mapped topic