Semiconductor device with air gap

Patent metadata

Field	Value
Publication number	US-8999837-B2
Application number	US-201314137339-A
Country	US
Kind code	B2
Filing date	Dec 20, 2013
Priority date	Aug 26, 2013
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A method of fabricating a semiconductor device may include forming isolation structures that include openings, over a substrate; forming sacrificial spacers on sidewalls of the openings; forming, on the sacrificial spacers, first conductive patterns that are recessed in the openings; removing the sacrificial spacers, and defining air gaps; forming a liner layer that caps the first conductive patterns and the air gaps; forming second conductive patterns through silicidation of the liner layer; and forming third conductive patterns over the second conductive patterns.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising, the method comprising:
forming isolation structures that include openings, over a substrate;
forming sacrificial spacers on sidewalls of the openings;
forming, on the sacrificial spacers, recessed first conductive patterns in the openings;
removing the sacrificial spacers to define air gaps;
forming a liner layer to cap the first conductive patterns and the air gaps;
forming second conduct…

Assignees

• Sk Hynix Inc

Inventors

• Park Jong-Kook
• Song Han-Sang
• Lee Jin-Yul
• Lee Chang-Ki

Classifications

• H10W20/081

  Electricity · mapped topic

• H10W20/076

  Electricity · mapped topic

• H10W20/072

  Electricity · mapped topic

• H10W20/069

  Electricity · mapped topic

• H10W20/056

  Electricity · mapped topic