Method for manufacturing light-emitting element inlcuding quantum dots
US-12150220-B2 · Nov 19, 2024 · US
Method for manufacturing display device
US8999836B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999836-B2 |
| Application number | US-38242006-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 9, 2006 |
| Priority date | May 13, 2005 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
It is an object of the present invention to provide a technique for manufacturing a highly reliable display device at low cost with high yield. A first electrode layer is formed by a sputtering method using a gas containing hydrogen or H 2 O, an electroluminescent layer is formed over the first electrode layer, and a second electrode layer is formed over the electroluminescent layer. According to one aspect of the present invention, a display device is manufactured to include a first electrode layer including indium zinc oxide containing silicon oxide and tungsten oxide, an electroluminescent layer over the first electrode layer, and a second electrode layer over the electroluminescent layer, where the electroluminescent layer includes a layer containing an organic compound and an inorganic compound to be in contact with the first electrode layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a display device, comprising the steps of: forming a thin film transistor over a substrate; forming a first insulating layer comprising a resin over the thin film transistor; forming a second insulating layer comprising a silicon nitride oxide film over and in contact with the first insulating layer; forming a titanium nitride film over and in contact with the second insulating layer; forming a reflective electrode layer ov…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H05B33/10Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8999836B2 cover?
- It is an object of the present invention to provide a technique for manufacturing a highly reliable display device at low cost with high yield. A first electrode layer is formed by a sputtering method using a gas containing hydrogen or H 2 O, an electroluminescent layer is formed over the first electrode layer, and a second electrode layer is formed over the electroluminescent layer. According …
- Who is the assignee on this patent?
- Oikawa Yoshiaki, Akimoto Kengo, Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H05B33/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).