Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Semiconductor device having metal gate and manufacturing method thereof
US8999830B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999830-B2 |
| Application number | US-201314135520-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2013 |
| Priority date | Jun 13, 2011 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device having metal gate comprising: providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench and a first conductivity type, the second transistor having a second conductivity type, and the first conductivity type and the second conductivity type being complementary; forming a first work function metal layer only in the first gate trench…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D64/017Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8999830B2 cover?
- A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial m…
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D64/017. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).