Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device

Patent metadata

Field	Value
Publication number	US-8999826-B2
Application number	US-201313865691-A
Country	US
Kind code	B2
Filing date	Apr 18, 2013
Priority date	Apr 27, 2007
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

First claim

What is claimed is:

1. A semiconductor device having a thickness L, comprising:
a p-doped region;
an n-doped region; and
a vertically inhomogeneous heavy metal doping profile comprising a first heavy metal doping concentration greater than C 1 across a first depth region of a thickness greater than L/6 and a second heavy metal doping concentration smaller than C 2 across a second depth region of a thickness greater than L/6, wherein C 1 >3×C 2 , wherein the semiconductor dev…

Assignees

• Infineon Technologies Austria

Inventors

• Schmidt Gerhard
• Bauer Josef

Classifications

• H10P30/204

  Electricity · mapped topic

• H10P30/21

  Electricity · mapped topic

• H10P36/03

  Electricity · mapped topic

• H10P36/00

  Electricity · mapped topic

• H10D30/66

  Electricity · mapped topic