Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
Manufacturing method of GaN-based semiconductor device and semiconductor device
US8999788B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999788-B2 |
| Application number | US-201313950079-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2013 |
| Priority date | Jan 25, 2011 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.
First claim
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What is claimed is: 1. A method of manufacturing a gallium-nitride-based semiconductor device, comprising: forming a first semiconductor layer of a gallium-nitride-based semiconductor; forming a recessed portion by dry etching a portion of the first semiconductor layer by a microwave plasma process using a bromine-based gas; forming a first sacrificial layer that contacts the first semiconductor layer and has a higher solid solubility for impurities included in the first semic…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8999788B2 cover?
- Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.
- Who is the assignee on this patent?
- Univ Tohoku, Furukawa Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/642. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).