Method of fabricating pixel structure and pixel structure thereof

Patent metadata

Field	Value
Publication number	US-8999775-B2
Application number	US-201313905107-A
Country	US
Kind code	B2
Filing date	May 29, 2013
Priority date	Mar 25, 2013
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A method for fabricating a pixel structure includes the following steps. A patterned semiconductor layer, an insulation layer, and a patterned metal layer are formed on a substrate sequentially. A first inter-layer dielectric (ILD) layer is formed to cover the patterned metal layer. A low temperature annealing process is performed after forming the first ILD layer. A hydrogen plasma treatment process is performed after the low temperature annealing process. A second ILD layer is formed to cover the first ILD layer after the hydrogen plasma treatment process. A third ILD layer is formed to cover the second ILD layer. A source electrode and a drain electrode are formed on the third ILD layer. A passivation layer is formed on the source electrode and the drain electrode. A pixel electrode is formed on the passivation layer. A pixel structure manufactured by the above-mentioned method is also provided.

First claim

What is claimed is:

1. A method of forming a pixel structure, comprising:
providing a substrate;
forming a patterned semiconductor layer on the substrate;
forming an insulation layer on the patterned semiconductor layer;
forming a patterned metal layer on the insulation layer, wherein the patterned metal layer partially overlap the patterned semiconductor layer in a perpendicular projection direction;
forming a first inter-layer dielectric (ILD) layer covering the patterne…

Assignees

• Au Optronics Corp

Inventors

• Lu Ssu-Hui
• Lee Ming-Hsien

Classifications

• H10P95/94 Primary

  Electricity · mapped topic

• H10D86/451

  Electricity · mapped topic

• H10D86/0221

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D86/40

  Electricity · mapped topic