Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US8999766B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999766-B2 |
| Application number | US-201314133369-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2013 |
| Priority date | Oct 23, 2009 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
Opening claim text (preview).
The invention claimed is: 1. A method for laying out a circuit design, for use in forming a lithographic mask set for use in fabricating an integrated circuit on a substrate, the method being for use by a computer system having a processor and memory, the method comprising: the computer system identifying a position on the integrated circuit at which a TSV is to be placed; the computer system determining an exclusion zone surrounding the TSV laterally; the computer system layi…
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