ESD/antenna diodes for through-silicon vias

US8999766B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8999766-B2
Application numberUS-201314133369-A
CountryUS
Kind codeB2
Filing dateDec 18, 2013
Priority dateOct 23, 2009
Publication dateApr 7, 2015
Grant dateApr 7, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for laying out a circuit design, for use in forming a lithographic mask set for use in fabricating an integrated circuit on a substrate, the method being for use by a computer system having a processor and memory, the method comprising: the computer system identifying a position on the integrated circuit at which a TSV is to be placed; the computer system determining an exclusion zone surrounding the TSV laterally; the computer system layi…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8999766B2 cover?
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
Who is the assignee on this patent?
Synopsys Inc
What technology area does this patent fall under?
Primary CPC classification H10W20/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).