Ionizing radiation blocking in IC chip to reduce soft errors

Patent metadata

Field	Value
Publication number	US-8999764-B2
Application number	US-83681907-A
Country	US
Kind code	B2
Filing date	Aug 10, 2007
Priority date	Aug 10, 2007
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

First claim

What is claimed is:

1. A method comprising:
forming a first layer of an integrated circuit (IC) chip, the first layer including at least one of a transistor, resistor, capacitor or interconnecting wire;
forming a first metallization layer over the first layer;
forming at least one dielectric layer over the first metallization layer, the at least one dielectric layer including ionizing radiation blocking material therein, wherein the ionizing radiation blocking material is conf…

Assignees

• Farooq Mukta G
• Melville Ian D
• Petrarca Kevin S
• Rodbell Kenneth P
• IBM

Inventors

• Farooq Mukta G
• Melville Ian D
• Petrarca Kevin S
• Rodbell Kenneth P

Classifications

• H10W42/25

  Electricity · mapped topic

• H10W20/48 Primary

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• H01L23/556

  Electricity · mapped topic

• Y10S438/958

  Cross-Sectional Technologies · mapped topic