Method for manufacturing organic semiconductor element, and organic semiconductor element

US8999749B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8999749-B2
Application numberUS-201214110643-A
CountryUS
Kind codeB2
Filing dateApr 11, 2012
Priority dateApr 11, 2011
Publication dateApr 7, 2015
Grant dateApr 7, 2015

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Abstract

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A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.

First claim

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The invention claimed is: 1. A method for manufacturing an organic semiconductor element, comprising steps of: an organic semiconductor layer formation step of forming an organic semiconductor layer to cover a source electrode and a drain electrode; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielect…

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What does patent US8999749B2 cover?
A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectr…
Who is the assignee on this patent?
Fujimoto Shin-Ya, Tomino Ken, Dainippon Printing Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10K71/231. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).