Method of manufacturing film
US-2018366590-A1 · Dec 20, 2018 · US
Organic thin film transistor and method of manufacturing the same
US8999748B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999748-B2 |
| Application number | US-201213670001-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2012 |
| Priority date | May 4, 2012 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an organic thin film transistor, comprising: sequentially forming a gate electrode, a gate insulator, and source and drain electrodes on a substrate; forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor; forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor, the second self-assembled mon…
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Classifications
- H10K10/40Primary
Electricity · mapped topic
- H01L51/0004Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8999748B2 cover?
- According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer o…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10K10/40. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).