Field effect transistor-based bio-sensor

Patent metadata

Field	Value
Publication number	US-8999739-B2
Application number	US-201313965346-A
Country	US
Kind code	B2
Filing date	Aug 13, 2013
Priority date	Dec 21, 2012
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.

First claim

The invention claimed is:

1. A method of forming a sensor, comprising:
disposing a silicon sensing fin on a buried oxide layer of a substrate to form a channel of undoped silicon for providing a current flow between a source region and a drain region, each of the source region and the drain region comprising heavily doped silicon;
depositing a dielectric layer and a metal oxide on one or more sides and a top of the sensing fin, the dielectric layer and the metal oxide forming a…

Assignees

• IBM

Inventors

• Afzali-Ardakani Ali
• D Emic Christopher P
• Jagtiani Ashish
• Zafar Sufi

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D30/67

  Electricity · mapped topic

• H10D30/021

  Electricity · mapped topic

• H01L29/66477

  Electricity · mapped topic

• H01L29/786

  Electricity · mapped topic