Layers or three-dimensional shaped bodies having two regions of different primary and/or secondary structure, method for production thereof and materials for conducting this method
US-2015355378-A1 · Dec 10, 2015 · US
Silicon-containing antireflective coatings including non-polymeric silsesquioxanes
US8999625B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999625-B2 |
| Application number | US-201313767114-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2013 |
| Priority date | Feb 14, 2013 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiO x background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An antireflective material, comprising: a silicon-containing base polymer; a non-polymeric silsesquioxane material; and a photoacid generator (PAG), wherein the non-polymeric silsesquioxane material comprises a polyhedral oligomeric silsesquioxane (POSS) having a hydrophilic side group protected with an acid labile functionality; wherein the antireflective material contains 80-99 wt. % of the silicon-containing base polymer and 0.5-10 wt. % of the non-…
Assignees
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Classifications
- G03F7/0757Primary
Physics · mapped topic
- G03F7/20Primary
Physics · mapped topic
- G03F7/11Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US8999625B2 cover?
- Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiO x background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric sil…
- Who is the assignee on this patent?
- IBM, Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0757. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).