Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US8999218B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999218-B2 |
| Application number | US-41089206-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 26, 2006 |
| Priority date | Jun 6, 2005 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Official abstract text for this publication.
A process of producing a member having a pattern. The process includes preparing a first mold having a pattern surface provided with a first uneven pattern at a surface of the first mold, and preparing a second mold having a pattern surface, provided with a second uneven pattern at a surface of the second mold, including a shape portion corresponding to an outer peripheral shape of the pattern surface provided with the first uneven pattern. When the pattern is transferred onto the member in a transfer area including (i) a peripheral area, which is an area not large enough to transfer an entire first uneven pattern of the first mold, and (ii) an area inside the peripheral area, in the area inside the peripheral area, the first uneven pattern of the first mold is transferred plural times to form a pattern group of the first uneven patterns, and in the peripheral area, the second uneven pattern of the second mold, including a shape portion corresponding to an outer peripheral shape of the pattern group, is transferred.
Opening claim text (preview).
What is claimed is: 1. A patterning process comprising the steps of: preparing a first mold having a first uneven pattern at a patterning surface thereof; preparing a second mold as a peripheral shot mold having a second uneven pattern at a patterning surface thereof; providing a wafer comprising a peripheral area along an entire peripheral edge thereof and having a non-peripheral area positioned inside the peripheral area and spaced from the peripheral edge; using the first…
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