Method and apparatus for manufacturing group 13 nitride crystal
US-2016177468-A1 · Jun 23, 2016 · US
Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature
US8999060B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999060-B2 |
| Application number | US-201313794877-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Nov 23, 2009 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
First claim
Opening claim text (preview).
What is claimed is: 1. A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising: (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride; (b) placing the charged reaction and vessel into a chamber; (c) applying a nitrogen gas pressure of 0.1 to 20 MPa to the reaction vessel; (d) applying a temperature of betwe…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C30B9/10Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US8999060B2 cover?
- Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange r…
- Who is the assignee on this patent?
- Feigelson Boris N, Hite Jennifer K, Kub Francis J, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C30B9/10. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).