Ion implantation system and method
US-2015357152-A1 · Dec 10, 2015 · US
US8997688B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8997688-B2 |
| Application number | US-201213363341-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2012 |
| Priority date | Jun 23, 2009 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.
Opening claim text (preview).
The invention claimed is: 1. A plasma grid implantation system comprising: a multi-stage differentially pumped system comprising: a plurality of stages, each with increasing level of vacuum leading to an implant stage having highest level of vacuum; a plurality of stages each with a decreasing level of vacuum leading away from the implant stage; a conveyor for transporting substrates to be implanted through the multi-stage differentially pumped system; a plasma implant sy…
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