Solution Based Etching of Titanium Carbide and Titanium Nitride Structures
US-2015371872-A1 · Dec 24, 2015 · US
US8997684B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8997684-B2 |
| Application number | US-201113250872-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2011 |
| Priority date | Apr 18, 2011 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.
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What is claimed is: 1. A system for meniscus processing a substrate, comprising: a proximity head having a plurality of delivery conduits for providing a process liquid to a surface of the substrate and a plurality of return conduits for removing the process liquid from the surface of the substrate, the plurality of delivery conduits and the plurality of return conduits generating a meniscus spanning at least a length of the first surface of the substrate; a pre-wetting dispense…
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