High impact resistant acceleration sensor

Patent metadata

Field	Value
Publication number	US-8997570-B2
Application number	US-201113253398-A
Country	US
Kind code	B2
Filing date	Oct 5, 2011
Priority date	May 13, 2008
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2).

2< L/I ≦2.82  Expression (1)

I/W ≦3.68  Expression (2)

First claim

I claim:

1. An acceleration sensor formed of an SOI substrate of a three-layered structure including an active silicon layer, a silicon oxide layer, and a silicon substrate, the acceleration sensor comprising:
a frame part;
a plurality of beam parts, the beam parts projecting inward from the frame part; and
a weight part supported by the beam parts;
wherein:
each of the beam parts is provided with a strain sensing part; and
a width W of each of the beam parts, a length I…

Assignees

• Maekawa Shinji
• Dainippon Printing Co Ltd

Inventors

• Maekawa Shinji

Classifications

• B81B2201/0235

  Operations & Transport · mapped topic

• G01P15/123

  Physics · mapped topic

• G01P15/18 Primary

  Physics · mapped topic

• B81B2203/0109

  Operations & Transport · mapped topic

• B81B3/0078

  Operations & Transport · mapped topic