Method for obtaining purified silicon metal
US-2024208829-A1 · Jun 27, 2024 · US
Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same
US8997524B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8997524-B2 |
| Application number | US-201213464488-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2012 |
| Priority date | May 4, 2012 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing polysilicon comprising: feeding powdery raw silicon to a silicon melting unit and melting the fed raw silicon by irradiating a first electron beam upon the raw silicon; continuously feeding and melting the raw silicon such that molten silicon is overflowed from the silicon melting unit; receiving, by an unidirectional solidification unit, the molten silicon overflowed from the silicon melting unit, transferring the molten silico…
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- C01B33/037Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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- What does patent US8997524B2 cover?
- Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is …
- Who is the assignee on this patent?
- Jang Bo Yun, Lee Jin Seok, Kim Joon Soo, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C01B33/037. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).