Transversely-excited film bulk acoustic resonator with a back-side dielectric layer
US-2024396526-A1 · Nov 28, 2024 · US
Method for manufacturing acoustic wave device
US8997320B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8997320-B2 |
| Application number | US-86406008-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 26, 2008 |
| Priority date | Jan 24, 2008 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
Official abstract text for this publication.
Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT ( 2 ) on a principal surface ( 1 a ) of a piezoelectric substrate ( 1 ), and forming a film by thermal spraying a material ( 3 ) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface ( 1 b ) of the piezoelectric substrate ( 1 ) where the IDT ( 2 ) is formed.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing an acoustic wave device, comprising the steps of: forming an inter-digital transducer on one principal surface of a piezoelectric substrate; forming a porous film by spraying a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate on a surface opposite to the principal surface of the piezoelectric substrate after forming the inter-digital transducer on the principal surface of the p…
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Cross-Sectional Technologies · mapped topic
- H03H3/02Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US8997320B2 cover?
- Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT ( 2 ) on a principal surface ( 1 a…
- Who is the assignee on this patent?
- Fuyutsume Toshiyuki, Nishino Taro, Yamazaki Hisashi, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H03H3/02. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).