Photonic device and method of making same
US-11892678-B2 · Feb 6, 2024 · US
Method of fabricating silicon waveguides with embedded active circuitry
US8995800B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8995800-B2 |
| Application number | US-201213542996-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2012 |
| Priority date | Jul 6, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A method of fabricating silicon waveguides with embedded active circuitry from silicon-on-insulator wafers utilizes photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of which at least partially defines the at least one waveguide and at least one embedded circuit recess. The photolithographic microfabrication techniques are sufficiently precise for the required small structural features of high frequency waveguides and the double masking layer allows the method to be completed more efficiently. The basic fabrication method may be extended to provide batch arrays to mass produce silicon waveguide devices.
First claim
Opening claim text (preview).
We claim: 1. A method of fabricating a silicon waveguide structure with an embedded circuit, comprising the steps of: 1) providing a silicon-on-insulator (SOI) wafer; 2) providing a double masking layer on said SOI wafer, leaving at least one portion of the surface of said SOI wafer unmasked, said double masking layer comprising: a first masking layer arranged to define the first half of at least one waveguide which has an associated desired waveguide depth and a circuit recess…
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Physics · mapped topic
- G02B6/12Primary
Physics · mapped topic
- H01P11/002Primary
Electricity · mapped topic
- G02B6/122Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US8995800B2 cover?
- A method of fabricating silicon waveguides with embedded active circuitry from silicon-on-insulator wafers utilizes photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of wh…
- Who is the assignee on this patent?
- Stupar Philip A, Borwick Iii Robert L, Mihailovich Robert E, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G02B6/12. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).