Non-volatile memory and methods of fabricating the same
US-2024268126-A1 · Aug 8, 2024 · US
US8995213B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8995213-B2 |
| Application number | US-201213711869-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2012 |
| Priority date | Sep 3, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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A nonvolatile memory device includes a memory cell array including a main cell area and a retention flag cell area, a retention check unit configured to compare a read result for retention flag cells included in the retention flag cell area to a reference value, and determine a retention state of the retention flag cells according to a comparison result, and a control logic configured to provide a retention check result based on the retention state to the external device in response to a retention check request provided from an external device.
Opening claim text (preview).
What is claimed is: 1. A nonvolatile memory device comprising: a memory cell array comprising a main cell area and a retention flag cell area; a retention check unit configured to compare a read result for retention flag cells included in the retention flag cell area to a reference value, and determine a retention state of the retention flag cells according to a comparison result; and a control logic configured to provide a retention check result based on the retention state t…
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