Magnetic element side shield with diffusion barrier

Patent metadata

Field	Value
Publication number	US-8995096-B2
Application number	US-201313844810-A
Country	US
Kind code	B2
Filing date	Mar 16, 2013
Priority date	Mar 16, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Various embodiments may position a side shield adjacent to and separated from a stack sidewall of a magnetic stack with the side shield having a shield layer disposed between the stack sidewall and a permanent magnet. The permanent magnet can be separated from a first portion of the shield layer by a diffusion barrier that decouples the permanent magnet from the shield layer.

First claim

What is claimed is:

1. An apparatus comprising a side shield positioned adjacent to and separated from a stack sidewall of a magnetic stack, the side shield comprising a shield layer disposed between the stack sidewall and a permanent magnet, the permanent magnet separated from a first portion of the shield layer by a diffusion barrier that decouples the permanent magnet from the shield layer, the permanent magnet comprising alternating metal layers that interdiffuse to a single compound in response to annealing.

2. The apparatus of claim 1 , wherein the magnetic stack is configured as an abutted junction read sensor comprising a magnetically free layer and a fixed magnetization reference structure.

3. The apparatus of claim 1 , wherein the magnetic stack is configured as a spin valve read sensor.

4. The apparatus of claim 1 , wherein the diffusion barrier comprises a non-magnetic material.

5. The apparatus of claim 1 , wherein the alternating metal layers are respectively Fe and Pt.

6. The apparatus of claim 1 , wherein the permanent magnet is decoupled from a trailing shield by a first isolation layer and the shield layer is decoupled from a leading shield and the magnetic stack by a continuous second isolation layer.

7. The apparatus of claim 6 , wherein the diffusion layer contacts the first isolation layer and is separated from the second isolation layer by the shield layer.

8. The apparatus of claim 1 , wherein the shield layer is shaped to continuously extend along two orthogonal directions to form an “L” shape.

9. The apparatus of claim 1 , wherein the permanent magnet has a higher magnetic coercivity than the shield layer.

10. The apparatus of claim 1 , wherein the shield layer has a shield sidewall shaped to match the stack sidewall.

11. An magnetic element comprising:
a magnetic stack; and
a side shield positioned adjacent to and separated from a stack sidewall of the magnetic stack, the side shield comprising a shield layer continuously extending along orthogonal sides of a permanent magnet, the permanent magnet separated from a first portion of the shield layer by a diffusion barrier and contacting a second portion of the shield layer, proximal the stack sidewall, the shield layer having a uniform thickness along each orthogonal side of the permanent magnet.

12. The magnetic element of claim 11 , wherein the diffusion barrier has a first width on an air bearing surface that is less than a second width of the shield layer.

13. The magnetic element of claim 11 , wherein the diffusion barrier has a uniform thickness along a cross-track direction.

14. The magnetic element of claim 11 , wherein the diffusion barrier has a varying thickness along a cross-track direction.

15. The magnetic element of claim 11 , wherein the permanent magnet and shield layer are exchange coupled along the second portion.

16. The magnetic element of claim 11 , wherein the shield layer contacts the permanent magnet at a third portion, distal the magnetic stack.

17. The magnetic element of claim 11 , wherein the diffusion barrier defines a decoupled portion between the permanent magnet and shield layer.

18. A method comprising:
constructing a side shield adjacent to and separated from a stack sidewall of a magnetic stack; and
separating a permanent magnet of the side shield from a shield layer of the side shield with a diffusion barrier that decouples the permanent magnet from the shield layer, the shield layer disposed between the stack sidewall and the permanent magnet and continuously extending along orthogonal sides of the permanent magnet, the diffusion barrier having a uniform thickness that separates the permanent magnet from the shield layer by a common separation distance along each orthogonal side of the permanent magnet.

19. The method of claim 18 , further comprising annealing the side shield to provide a predetermined first coercivity in the permanent magnet that is greater than a predetermined second coercivity of the shield layer.

20. The method of claim 19 , wherein the diffusion barrier prevents interdiffusion of shield layer material with permanent magnetic material during the annealing step.

Assignees

• Seagate Technology Llc

Inventors

• Mckinlay Shaun Eric
• Singleton Eric Walter

Classifications

• G11B5/3932

  Magnetic biasing films · CPC title

• Y10T29/49032

  Fabricating head structure or component thereof · CPC title

• G11B5/3912 Primary

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B5/112 Primary

  Manufacture of shielding device · CPC title