Semiconductor device and touch panel

US8994891B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8994891-B2
Application numberUS-201313888480-A
CountryUS
Kind codeB2
Filing dateMay 7, 2013
Priority dateMay 16, 2012
Publication dateMar 31, 2015
Grant dateMar 31, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which includes a plurality of pixels and the photosensor adjacent to at least one of the plurality of pixels is provided. Each of the plurality of pixels includes a pair of terminals. One of the pair of terminals is a reflective conductive film. Alternatively, each of the pair of terminals is a light-transmitting conductive film.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a first transistor comprising a first oxide semiconductor layer, over a substrate having an insulating surface; and a second transistor comprising a second oxide semiconductor layer, over the substrate having the insulating surface, wherein the first transistor is electrically connected to one of electrodes of a light-emitting element through a connection electrode, wherein a first electrode layer electrically connect…

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What does patent US8994891B2 cover?
A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which in…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H10D86/60. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).