Display apparatus
US-2024414942-A1 · Dec 12, 2024 · US
Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film
US8994887B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994887-B2 |
| Application number | US-201414499313-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 29, 2014 |
| Priority date | Feb 12, 1999 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor layer comprising a channel formation region; a gate electrode over the semiconductor layer; a first insulating film interposed between the semiconductor layer and the gate electrode; a second insulating film over the gate electrode; a source wiring over the second insulating film; a drain wiring over the second insulating film; a first organic film over the source wiring and the drain wiring; a…
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Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US8994887B2 cover?
- In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, i…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10D86/481. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).