Image acquiring device
US-11888292-B2 · Jan 30, 2024 · US
US8994864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994864-B2 |
| Application number | US-201213722860-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2012 |
| Priority date | Jul 9, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.
Opening claim text (preview).
The invention claimed is: 1. A solid-state imaging device comprising: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to each of the column signal lines; and a feedback line provided, for each of the columns, to feed back an output signal of the inverting amplifier to the pixels in the column, wherein each of the pixels inclu…
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