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Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment
US8994858B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994858-B2 |
| Application number | US-201314083365-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2013 |
| Priority date | Oct 27, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
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A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device, comprising: a pixel area, wherein the pixel area includes: a plurality of pixels, wherein each of the pixels includes at least one photodiode and a micro lens, wherein the micro lens is formed over the photodiodes of the pixels, wherein the micro lens includes: a first layer, wherein the first layer has a first refractive index; and a second layer, wherein the second layer has a second refractive index that is differen…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F39/8053Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8994858B2 cover?
- A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular …
- Who is the assignee on this patent?
- Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8053. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).