Loaded-type surveying sensor using cnt or conductive polymer and method for manufacturing the same
US-2024302490-A1 · Sep 12, 2024 · US
US8994579B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994579-B2 |
| Application number | US-201213648579-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 10, 2012 |
| Priority date | Oct 11, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An RF pulse signal generation switching circuit for controlling an output of a power FET for amplifying a high frequency signal to generate an RF pulse signal that is the high frequency signal pulse formed into a pulse-wave shape is provided. The circuit includes first and third n-type FETs of which gates are inputted with a control pulse that supplies a rise timing and a fall timing of a pulse, and a second n-type FET of which a gate is connected with a drain of the first FET. A source of the first FET and a source of the third FET are grounded, respectively. The drain of the first FET is applied with a first drive voltage via a resistor. A drain of the second FET is applied with a second drive voltage. A source of the second FET is connected with a drain of the third FET and the connection point therebetween is connected with the power FET. A capacitor is connected between the connection point and an end of the resistor from which the first drive voltage is applied.
Opening claim text (preview).
What is claimed is: 1. An RF pulse signal generation switching circuit for controlling an output of a power FET for amplifying a high frequency signal to generate an RF pulse signal that is the high frequency signal pulse formed into a pulse-wave shape, comprising: first and third n-type FETs of which gates are inputted with a control pulse generated by a controller, wherein the control pulse supplies a rise timing and a fall timing of a pulse; and a second n-type FET of which a…
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.