RF pulse signal generation switching circuit, RF pulse signal generating circuit, and target object detecting apparatus

US8994579B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8994579-B2
Application numberUS-201213648579-A
CountryUS
Kind codeB2
Filing dateOct 10, 2012
Priority dateOct 11, 2011
Publication dateMar 31, 2015
Grant dateMar 31, 2015

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  2. Abstract

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Abstract

Official abstract text for this publication.

An RF pulse signal generation switching circuit for controlling an output of a power FET for amplifying a high frequency signal to generate an RF pulse signal that is the high frequency signal pulse formed into a pulse-wave shape is provided. The circuit includes first and third n-type FETs of which gates are inputted with a control pulse that supplies a rise timing and a fall timing of a pulse, and a second n-type FET of which a gate is connected with a drain of the first FET. A source of the first FET and a source of the third FET are grounded, respectively. The drain of the first FET is applied with a first drive voltage via a resistor. A drain of the second FET is applied with a second drive voltage. A source of the second FET is connected with a drain of the third FET and the connection point therebetween is connected with the power FET. A capacitor is connected between the connection point and an end of the resistor from which the first drive voltage is applied.

First claim

Opening claim text (preview).

What is claimed is: 1. An RF pulse signal generation switching circuit for controlling an output of a power FET for amplifying a high frequency signal to generate an RF pulse signal that is the high frequency signal pulse formed into a pulse-wave shape, comprising: first and third n-type FETs of which gates are inputted with a control pulse generated by a controller, wherein the control pulse supplies a rise timing and a fall timing of a pulse; and a second n-type FET of which a…

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What does patent US8994579B2 cover?
An RF pulse signal generation switching circuit for controlling an output of a power FET for amplifying a high frequency signal to generate an RF pulse signal that is the high frequency signal pulse formed into a pulse-wave shape is provided. The circuit includes first and third n-type FETs of which gates are inputted with a control pulse that supplies a rise timing and a fall timing of a pulse…
Who is the assignee on this patent?
Furuno Electric Co, Furuno Electric Co
What technology area does this patent fall under?
Primary CPC classification G01S7/282. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).