SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Bidirectional switch and switch circuit using the bidirectional switch
US8994443B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994443-B2 |
| Application number | US-201113221523-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 30, 2011 |
| Priority date | Aug 31, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
In a bidirectional switch using a metal-oxide-semiconductor field-effect transistor (MOSFET), the source terminal and the backgate terminal of the MOSFET are connected to each other via a transfer gate. A switch may be used between the connection point of the backgate terminal and the transfer gate of the MOSFET and the ground potential (where the MOSFET is an n-channel type) or supply potential (where the MOSFET is a p-channel type).
First claim
Opening claim text (preview).
What is claimed is: 1. A switch circuit to be mounted in a mobile device having a shared terminal that allows insertion of a terminal of a USB cable or insertion of a terminal of a cable dedicated to the transmission of audio signals in a shared manner, comprising: a USB switch connected between the shared terminal and a USB driver within the mobile device; an audio switch connected to the shared terminal and connected in parallel with the USB switch; a second switch connected…
Assignees
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Classifications
- H10D12/00Primary
Electricity · mapped topic
Electricity · mapped topic
- H03K17/063Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8994443B2 cover?
- In a bidirectional switch using a metal-oxide-semiconductor field-effect transistor (MOSFET), the source terminal and the backgate terminal of the MOSFET are connected to each other via a transfer gate. A switch may be used between the connection point of the backgate terminal and the transfer gate of the MOSFET and the ground potential (where the MOSFET is an n-channel type) or supply potentia…
- Who is the assignee on this patent?
- Yamada Kouichi, Semiconductor Components Ind
- What technology area does this patent fall under?
- Primary CPC classification H10D12/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).