Semiconductor device, image display device, storage device, and electronic device

Patent metadata

Field	Value
Publication number	US-8994439-B2
Application number	US-201313862932-A
Country	US
Kind code	B2
Filing date	Apr 15, 2013
Priority date	Apr 19, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first circuit comprising a first transistor; and
a second circuit electrically connected to a gate of the first transistor through a first signal line, the second circuit comprising:
first to n-th inverters being sequentially connected in series, wherein n is a natural number larger than one;
a bootstrap circuit; and
a delay circuit,

wherein an input terminal of the first inverter is electrically connected to a…

Assignees

• Semiconductor Energy Lab

Inventors

• Kaneyasu Makoto
• Toyotaka Kouhei

Classifications

• G09G2300/0842

  Physics · mapped topic

• G09G3/3677

  Physics · mapped topic

• G09G3/3266 Primary

  Physics · mapped topic

• G09G2310/0291

  Physics · mapped topic

• H03K3/012 Primary

  Electricity · mapped topic