Semiconductor integrated circuit device having bulk bias control function and method of driving the same
US-2016320789-A1 · Nov 3, 2016 · US
US8994401B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994401-B2 |
| Application number | US-201314018784-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 5, 2013 |
| Priority date | Dec 17, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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A semiconductor device includes a first input buffer adjusting a logic threshold voltage, a first replica circuit, a first reference voltage generating circuit, and a first comparator circuit. The first replica circuit is identical in circuit configuration to the first input buffer. The first replica circuit has an input and an output connected to the input. The first replica circuit generates the logic threshold voltage as an output voltage. The first reference voltage generating circuit generates a first reference voltage. The first comparator circuit compares the logic threshold voltage as an output voltage of the first replica circuit to the first reference voltage to generate a first threshold adjustment signal. The first comparator circuit supplies the first threshold adjustment signal to the first input buffer and the first replica circuit. The first threshold adjustment signal allows the first input buffer to adjust the logic threshold voltage.
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What is claimed is: 1. A semiconductor device, comprising: an input buffer comprising: first and second PMOS transistors serially interconnected between a first power supply node and an output node of the input buffer; and first and second NMOS transistors serially interconnected between a second power supply node and the output node of the input buffer, wherein a gate of the first PMOS transistor and a gate of the first NMOS transistor are connected to an input node of the i…
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