Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
US8994151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994151-B2 |
| Application number | US-201313899826-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 22, 2013 |
| Priority date | May 31, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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A photomask has a mask blank and a light shielding film formed on the mask blank. The light shielding film includes a plurality of opening traces extending in a first direction. An end of a first opening trace in the first direction and an end of a second opening trace in the first direction are in different positions in the first direction. The second opening trace adjoins the first opening trace.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate on which a predetermined layer is formed; a first pattern extending in plan view in a first direction in the predetermined layer; a second pattern extending in the plan view in parallel with the first pattern in the predetermined layer; and a third pattern between the first and second patterns extending in the plan view in parallel with the first and second patterns in the predetermined layer…
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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