Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US8994150B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994150-B2 |
| Application number | US-201213674535-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 12, 2012 |
| Priority date | Jul 4, 2008 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
Methods and apparatus for lowering the capacitance of an interconnect, are disclosed. An example apparatus may include an interconnect formed in at least one integrated circuit and configured to pass a signal through at least a portion of the at least one integrated circuit. The apparatus may include a transmitter to operate at a first voltage and a second voltage, and to output to an end node of the interconnect a reduced swing signal ranging from the first voltage to a third voltage. The third voltage may be between the first and second voltages, and the reduced swing signal may operate to reduce a capacitance of the interconnect when compared to operating the transmitter at the second voltage. Additional apparatus and methods are disclosed.
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: an interconnect formed in at least one integrated circuit and configured to pass a signal through at least a portion of the at least one integrated circuit; and a transmitter to operate at a first voltage and a second voltage and to output to an end node of the interconnect a reduced swing signal ranging from the first voltage to a third voltage, the third voltage being between the first and second voltages, the reduced swing signa…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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