Digital silicon photomultiplier detector cells

Patent metadata

Field	Value
Publication number	US-8994136-B2
Application number	US-201314017787-A
Country	US
Kind code	B2
Filing date	Sep 4, 2013
Priority date	Jan 28, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

First claim

What is claimed is:

1. A silicon photomultiplier detector cell including a photodiode region and a readout circuit region formed on a same substrate, the photodiode region comprising:
a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with p-type impurities;
a second semiconductor layer doped with n-type impurities and not exposed on the surface of the silicon photomultiplier detector cell; and
a first epitaxial layer doped…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jae-Chul
• Kim Young
• Lee Chae-Hun
• Jeon Yong-Woo
• Kim Chang-Jung

Classifications

• G01T1/208 Primary

  Physics · mapped topic

• H10F39/189

  Electricity · mapped topic

• H10F39/107

  Electricity · mapped topic

• H10F30/225 Primary

  Electricity · mapped topic

• H10F30/221

  Electricity · mapped topic