Tunnel junction laminated film, magnetic memory element, and magnetic memory
US-2024284803-A1 · Aug 22, 2024 · US
Magnetic memory element and magnetic memory
US8994130B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994130-B2 |
| Application number | US-201013145082-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2010 |
| Priority date | Jan 30, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
First claim
Opening claim text (preview).
The invention claimed is: 1. A magnetic memory element comprising: a first magnetization free layer configured to be formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer configured to be provided near said first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer configured to be formed of a ferromagnetic material having in-plane magnetic anisotropy; and…
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- G11C11/16Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8994130B2 cover?
- A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; an…
- Who is the assignee on this patent?
- Fukami Shunsuke, Suzuki Tetsuhiro, Nagahara Kiyokazu, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification G11C11/16. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).