Semiconductor memory device with a buried drain and its memory array

Patent metadata

Field	Value
Publication number	US-8994095-B2
Application number	US-201013322640-A
Country	US
Kind code	B2
Filing date	Dec 24, 2010
Priority date	Dec 24, 2009
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate ( 107 ); one drain region ( 108 ) of a first doping type; two source regions ( 101 a, 101 b ) of a second doping type; and a stacked gate provided on the semiconductor substrate for capturing electrons. A memory array formed by a plurality of semiconductor memory devices and a manufacturing method thereof are also provided. The semiconductor memory device has the advantages of small cell area, simple manufacturing process and the like. The manufacturing cost of the memory device is reduced and the storing density of the memory device is increased.

First claim

What is claimed:

1. A semiconductor memory device with a buried drain, comprising:
a semiconductor substrate ( 107 ),
a drain of a first conductivity ( 108 ),
two sources of a second conductivity ( 101 a , 101 b ),
and a gate stack with charge trapping layer to locally trap electrons, the gate stack having:
a first dielectric layer ( 104 ) with a width of bandgap covering the channel region ( 106 ),
a second dielectric layer ( 103 ) disposed over the said first diel…

Assignees

• Wang Pengfei
• Sun Qingqing
• Ding Shijin
• Zhang Wei
• Univ Fudan

Inventors

• Wang Pengfei
• Sun Qingqing
• Ding Shijin
• Zhang Wei

Classifications

• H10D64/035 Primary

  Electricity · mapped topic

• H01L27/11521

  Electricity · mapped topic

• H01L21/28273 Primary

  Electricity · mapped topic

• H10B41/30

  Electricity · mapped topic