Semiconductor memory device and manufacturing method of semiconductor memory device
US-2024313073-A1 · Sep 19, 2024 · US
Nonvolatile semiconductor memory device and method for manufacturing same
US8994094B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994094-B2 |
| Application number | US-201113235429-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2011 |
| Priority date | Mar 24, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked body, first and second semiconductor pillars, a connecting portion, a first memory film, and a dividing portion. The stacked bodies include a plurality of electrode films stacked along a first axis and as interelectrode insulating film provided between the electrode films. The first and second semiconductor pillars penetrate through the first and second stacked bodies along the first axis, respectively. The connecting portion electrically connects the first and second semiconductor pillars. The first memory film is provided between the electrode film and the semiconductor pillar. The dividing portion electrically divides the first and second electrode films from each other between the first semiconductor pillar and the second semiconductor pillar, is in contact with the connecting portion, and includes a stacked film including a material used for the first memory film.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile semiconductor memory device comprising: a first stacked body including a plurality of first electrode films stacked along a first axis and a first interelectrode insulating film provided between two layers of the first electrode films neighboring along the first axis; a first semiconductor pillar penetrating through the first stacked body along the first axis; a second stacked body juxtaposed with the first stacked body along a second axis…
Assignees
Inventors
Classifications
- H10D64/037Primary
Electricity · mapped topic
- H01L27/11582Primary
Electricity · mapped topic
Electricity · mapped topic
- H10B43/27Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8994094B2 cover?
- According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked body, first and second semiconductor pillars, a connecting portion, a first memory film, and a dividing portion. The stacked bodies include a plurality of electrode films stacked along a first axis and as interelectrode insulating film provided between the electrode films. The first and seco…
- Who is the assignee on this patent?
- Matsuda Toru, Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D64/037. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).