Gate structure with insulating structure and method for manufacturing the same
US-2016365343-A1 · Dec 15, 2016 · US
Semiconductor device with ONO film
US8994093B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994093-B2 |
| Application number | US-4908908-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2008 |
| Priority date | Mar 15, 2007 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes bit lines provided in a semiconductor substrate; an ONO film that is provided along the surface of the semiconductor substrate and is made of a tunnel oxide film, a trap layer, and a top oxide film; and an oxide film that is provided on the surface of the semiconductor substrate in the middle between the bit lines and contacts the side face of the ONO film, in which the film thickness of the oxide film is larger than the sum of the thicknesses of the tunnel oxide film and the top oxide film, and smaller than the thickness of the ONO film.
First claim
Opening claim text (preview).
We claim: 1. A semiconductor device comprising: a semiconductor substrate; a bit line provided in the semiconductor substrate; an oxide-nitride-oxide (ONO) film that is provided along a surface of the semiconductor substrate, and includes a tunnel oxide film, a trap layer made of a nitride film, and a top oxide film; and an oxide film, formed from the oxidation of the nitride film, that is provided on the surface of the semiconductor substrate in a middle portion between bit…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8994093B2 cover?
- A semiconductor device includes bit lines provided in a semiconductor substrate; an ONO film that is provided along the surface of the semiconductor substrate and is made of a tunnel oxide film, a trap layer, and a top oxide film; and an oxide film that is provided on the surface of the semiconductor substrate in the middle between the bit lines and contacts the side face of the ONO film, in wh…
- Who is the assignee on this patent?
- Hayakawa Yukio, Utsuno Yukihiro, Spansion Llc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/699. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).