Gallium lanthanide oxide films
US-2015380240-A1 · Dec 31, 2015 · US
Nonvolatile semiconductor storage device and method of manufacturing the same
US8994090B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994090-B2 |
| Application number | US-201314024801-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2013 |
| Priority date | Mar 13, 2013 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A nonvolatile semiconductor storage device including a memory cell region including a memory cell having a charge storing layer above a gate insulating film and a control electrode above the charge storing layer via an interelectrode insulating film; and a peripheral circuit region including a peripheral element having a first polysilicon and a first insulating film above the first polysilicon; wherein the charge storing layer includes a polysilicon doped with P-type impurity including a first upper region contacting the interelectrode insulating film and having a first doped layer doped with carbon or nitrogen, and at least a portion of a region below the first doped layer is neither doped with carbon nor nitrogen, and wherein the first polysilicon includes a second upper region contacting the first insulating film and having a second doped layer doped with carbon or nitrogen, the first and the second doped layers having equal thickness.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile semiconductor storage device comprising: a memory cell region including a memory cell having a charge storing layer above a gate insulating film and a control electrode stacked above the charge storing layer via an interelectrode insulating film; and a peripheral circuit region including a peripheral element having a first polysilicon and a first insulating film stacked above the first polysilicon; wherein the charge storing layer includes…
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Classifications
Electricity · mapped topic
- H10D30/681Primary
Electricity · mapped topic
- H10D30/68Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L29/788Primary
Electricity · mapped topic
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- What does patent US8994090B2 cover?
- A nonvolatile semiconductor storage device including a memory cell region including a memory cell having a charge storing layer above a gate insulating film and a control electrode above the charge storing layer via an interelectrode insulating film; and a peripheral circuit region including a peripheral element having a first polysilicon and a first insulating film above the first polysilicon;…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/681. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).