Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8994087-B2
Application number	US-201313738493-A
Country	US
Kind code	B2
Filing date	Jan 10, 2013
Priority date	Jan 12, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

According to one embodiment, a semiconductor device includes a substrate and a first transistor. The substrate has a major surface. The first transistor is provided on the major surface. The first transistor includes a first stacked body, first and second conductive sections, a first gate electrode, and a first gate insulating film. The first stacked body includes first semiconductor layers and first insulating layers alternately stacked. The first semiconductor layers have a side surface. The first conductive section is electrically connected to one of the first semiconductor layers. The second conductive section is apart from the first conductive section and electrically connected to the one of the first semiconductor layers. The first gate electrode is provided between the first and second conductive sections and opposed to the side surface. The first gate insulating film is provided between the first gate electrode and the first semiconductor layers.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate having a major surface;
a first transistor provided on the major surface; and
a second transistor provided on the major surface,
the first transistor including:
a first stacked body including a plurality of first semiconductor layers and a plurality of first insulating layers alternately stacked along a first direction perpendicular to the major surface, each of the first semiconductor layers having a sid…

Assignees

• Toshiba Kk

Inventors

• Saitoh Masumi
• Numata Toshinori
• Sakuma Kiwamu
• Kusai Haruka

Classifications

• H10P30/20

  Electricity · mapped topic

• B82Y10/00

  Operations & Transport · mapped topic

• H10D62/121

  Electricity · mapped topic

• H10D30/6743

  Electricity · mapped topic

• H10D30/6737

  Electricity · mapped topic