Memory device made from stacked substrates bonded with a resin containing conductive particles

Patent metadata

Field	Value
Publication number	US-8994086-B2
Application number	US-90431310-A
Country	US
Kind code	B2
Filing date	Oct 14, 2010
Priority date	Nov 11, 2004
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first element forming layer;
a second element forming layer adhered to the first element forming layer by an adhesive layer made of conductive particles dispersed in a resin,
wherein the first element forming layer includes:
a first transistor and a second transistor;
an interlayer insulating layer which covers the first transistor and the second transistor;
a first conductive layer functioning as an antenna over…

Assignees

• Yamazaki Shunpei
• Abe Hiroko
• Nemoto Yukie
• Nomura Ryoji
• Yukawa Mikio
• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Abe Hiroko
• Nemoto Yukie
• Nomura Ryoji
• Yukawa Mikio

Classifications

• H10W90/753

  Electricity · mapped topic

• H10W72/07554

  Electricity · mapped topic

• H10W72/884

  Electricity · mapped topic

• H10W72/547

  Electricity · mapped topic

• H10W44/248

  Electricity · mapped topic