Imaging element and imaging device
US-2024388815-A1 · Nov 21, 2024 · US
X-Y address type solid state image pickup device and method of producing the same
US8994083B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994083-B2 |
| Application number | US-201213541447-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2012 |
| Priority date | Jul 11, 2001 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
First claim
Opening claim text (preview).
We claim: 1. An imaging device comprising: a semiconductor layer, a first surface of the semiconductor layer being opposite to a second surface of the semiconductor layer; wirings in an insulator layer, said insulator layer touching said first surface; a back side layer of a first conductivity type at said second surface, said back side layer being between a photo-electric conversion region of a second conductivity type and a micro-lens; a photo-diode layer of the first cond…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8994083B2 cover?
- In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiri…
- Who is the assignee on this patent?
- Suzuki Ryoji, Mabuchi Keiji, Mori Tomonori, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/199. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).