Stacked semiconductor nanowires with tunnel spacers

Patent metadata

Field	Value
Publication number	US-8994081-B2
Application number	US-201314028053-A
Country	US
Kind code	B2
Filing date	Sep 16, 2013
Priority date	May 14, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A structure is provided that includes at least one multilayered stacked semiconductor material structure located on a semiconductor substrate and at least one sacrificial gate material structure straddles a portion of the at least one multilayered stacked semiconductor structure. The at least one multilayered stacked semiconductor material structure includes alternating layers of sacrificial semiconductor material and semiconductor nanowire template material. End segments of each layer of sacrificial semiconductor material are then removed and filled with a dielectric spacer. Source/drain regions are formed from exposed sidewalls of each layer of semiconductor nanowire template material, and thereafter the at least one sacrificial gate material structure and remaining portions of the sacrificial semiconductor material are removed suspending each semiconductor material. A gate structure is formed within the areas previously occupied by the at least one sacrificial gate material structure and remaining portions of the sacrificial semiconductor material.

First claim

What is claimed is:

1. A semiconductor structure comprising:
at least one stacked semiconductor nanowire array suspended above a surface of a semiconductor substrate, wherein said at least one stacked semiconductor nanowire array includes a plurality of vertically spaced apart semiconductor nanowires;
a tunnel spacer located beneath and at end portions of each vertically spaced apart semiconductor nanowire of said at least one stacked semiconductor nanowire array, wherein a side…

Assignees

• IBM

Inventors

• Leobandung Effendi

Classifications

• H10D62/822

  Electricity · mapped topic

• H10D64/514

  Electricity · mapped topic

• H10D62/121

  Electricity · mapped topic

• H10D62/119

  Electricity · mapped topic

• H10D62/116

  Electricity · mapped topic