Graphene electronic devices having multi-layered gate insulating layer

US8994079B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8994079-B2
Application numberUS-201213491999-A
CountryUS
Kind codeB2
Filing dateJun 8, 2012
Priority dateJun 10, 2011
Publication dateMar 31, 2015
Grant dateMar 31, 2015

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Abstract

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A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.

First claim

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What is claimed is: 1. A graphene electronic device comprising: a conductive substrate configured to function as a gate electrode; a gate insulating layer formed on the conductive substrate, the gate insulating layer including an inorganic insulating layer and an organic insulating layer; a graphene channel layer formed on the gate insulating layer; and a source electrode formed on one end of the graphene channel layer and a drain electrode formed on another end of the graph…

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What does patent US8994079B2 cover?
A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.
Who is the assignee on this patent?
Song Hyun-Jae, Cho Byung-Jin, Seo Sun-Ae, and 2 more
What technology area does this patent fall under?
Primary CPC classification H10D62/882. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).