Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
US8994079B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994079-B2 |
| Application number | US-201213491999-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2012 |
| Priority date | Jun 10, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.
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What is claimed is: 1. A graphene electronic device comprising: a conductive substrate configured to function as a gate electrode; a gate insulating layer formed on the conductive substrate, the gate insulating layer including an inorganic insulating layer and an organic insulating layer; a graphene channel layer formed on the gate insulating layer; and a source electrode formed on one end of the graphene channel layer and a drain electrode formed on another end of the graph…
Electricity · mapped topic
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