Hydrogen mitigation schemes in the passivation of advanced devices

Patent metadata

Field	Value
Publication number	US-8994073-B2
Application number	US-201213644506-A
Country	US
Kind code	B2
Filing date	Oct 4, 2012
Priority date	Oct 4, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or more Hydrogen-free SiN layers on, and preferably directly on, the surface of the semiconductor body, a Hydrogen barrier layer on, and preferably directly on, a surface of the one or more Hydrogen-free SiN layers opposite the semiconductor body, and a Chemical Vapor Deposition (CVD) SiN layer on, and preferably directly on, a surface of the Hydrogen barrier layer opposite the one or more Hydrogen-free SiN layers. The Hydrogen barrier layer preferably includes one or more oxide layers of the same or different compositions. Further, in one embodiment, the Hydrogen barrier layer is formed by Atomic Layer Deposition (ALD).

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor body; and
a passivation structure on a surface of the semiconductor body, the passivation structure comprising:
one or more Hydrogen-free Silicon Nitride layers on the surface of the semiconductor body;
a Hydrogen barrier layer having more than one oxide layer on a surface of the one or more Hydrogen-free Silicon Nitride layers opposite the semiconductor body; and
an additional Silicon Nitride layer o…

Assignees

• Cree Inc

Inventors

• Hagleitner Helmut
• Ring Zoltan

Classifications

• H10D62/8503

  Electricity · mapped topic

• H10W74/137

  Electricity · mapped topic

• H10W74/43

  Electricity · mapped topic

• H10D30/015

  Electricity · mapped topic

• H10D30/4755 Primary

  Electricity · mapped topic