Surface light-emission element using zinc oxide substrate
US-2015372191-A1 · Dec 24, 2015 · US
Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
US8994071B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994071-B2 |
| Application number | US-201013264509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 30, 2010 |
| Priority date | May 5, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor construction, comprising: a III-V semiconductor substrate that contains indium; at least first and second II-VI semiconductor layers formed atop the III-V semiconductor substrate, the first II-VI semiconductor layer being disposed between the second II-VI semiconductor layer and the III-V semiconductor substrate; and an interface disposed between the III-V semiconductor substrate and the first II-VI semiconductor layer; wherein th…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8994071B2 cover?
- We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are c…
- Who is the assignee on this patent?
- Miller Thomas J, Haase Michael A, Sun Xiaoguang, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/823. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).