Manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-8994066-B2
Application number	US-201414516598-A
Country	US
Kind code	B2
Filing date	Oct 17, 2014
Priority date	Jun 8, 2011
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor layer having a plurality of impurity regions forming a transistor;
a gate trench formed in the semiconductor layer;
a gate electrode buried in the gate trench and having an upper surface flush with a front surface of the semiconductor layer;
a diode trench formed in the semiconductor layer; and
a double-ended zener diode buried in the diode trench and having an upper surface flush with the front sur…

Assignees

• Rohm Co Ltd

Inventors

• Yoshimochi Kenichi

Classifications

• H10D84/811

  Electricity · mapped topic

• H10W72/0198

  Electricity · mapped topic

• H10W72/5473

  Electricity · mapped topic

• H10W72/926

  Electricity · mapped topic

• H10W72/952

  Electricity · mapped topic