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US-2017358568-A1 · Dec 14, 2017 · US
High-voltage vertical power component
US8994065B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994065-B2 |
| Application number | US-201313901494-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2013 |
| Priority date | May 30, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A vertical power component comprising: a silicon substrate of a first conductivity type; a lower semiconductor region of a second conductivity type on a lower surface of the silicon substrate; a lower electrode on the lower semiconductor region; an upper semiconductor region of the second conductivity type on an upper surface of the silicon substrate; a gate electrode and an upper electrode both on an upper surface of the upper semiconductor region;…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D18/021Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8994065B2 cover?
- A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component per…
- Who is the assignee on this patent?
- St Microelectronics Tours Sas, Univ Rabelais Francois
- What technology area does this patent fall under?
- Primary CPC classification H10D18/021. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).